jeiizu ^>.mi-l,onailctoi l/^ro ducts., o c' tj ne. 20 stern ave. springfield, new jersey 07081 usa npim silicon power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 description the 2sc2333 is npn silicon triple diffused transistor designed for switching regulator, dc-dc converter and ultrasonic appliance ap- plications, features ? high speed switching. ? low collector saturation voltage. ? specified of reverse biased soa with inductive loads. absolute maximum ratings maximum temperatures storage temperature -55 to +150 c junction temperature 150 c maximum maximum power dissipation (tc =25 c) total power dissipation 15 w maximum voltages and currents (ta =25 c) vcbo collector to base voltage 500 v collector to emitter voltage 400 v emitter to base voltage 7.0 v 'c(dci collector current (dc) 2.0 a 'c(pulse) collector current (pulse)* 4.0 a 'b(dc) base current (dc) 1.0 a * pw ? 350 ms, duty cycle -i 10 % electrical characteristics (ta = 25 c) package dimensions in millimeters (inches) ? 10.7 max. 05 (0.421 max.), 36i()2 ??, (f 0.142) '-1.3*0.2 (0.051) -4-_28 ^t^(oll) 1. base (b) 2. collector (c) 3. emitter ie) 4. fin (collector) jedec: to-220ab symbol characteristic win. typ. max, unit test conditions ?on *stg vce(sat) vbe(sat) vceo(sus) vcexisush turn on time storage time fall time dc current gain** dc current gain** collector saturation voltage** base saturation voltage** collector to emitter sustaining voltage collector to emitter sustaining voltage vcex(sus)2 collector to emitter sustaining voltage ic8o collector cutoff current icer collector cutoff current icex1 collector cutoff current 'cex2 collector cutoff current emitter cutoff current 20 10 400 450 400 1.0 2.5 1.0 80 1.0 1.2 10 1.0 10 1.0 10 ms v v v ma ma ma ma ma ic-0.5 a. lgi =-lb2 = 0.1 a rl = soo n, vcg=150 v see test circuit. vce = 5.0 v, lc = 0.1 a vce = 5.0 v, ic = 0.5a ic = 0.5 a, ib = 0.1 a, l= 1 mh lc = 0.5 a, ib1 = ? i[32 = 0.1 a, ta= 125 c, l = 180 mh, clamped ic= 1.0 a, ib] =0.2 a,-ib2 = 0.2 a, ta=125c. l= 180 mh, clamped e = 51 n,ta=125c 400v,vbe(off) = -5.0 v 400v.vbe(off) = -5.0 v, ta = 125c veb=5.0v, ic **pulse test : pw a 350 ^s. duty cycle s 2 %/pulsed classification of hfe1 rank range m 20 to 40 l 30 to 60 k 40 to 80 test conditions : = 5.0 v, iq^ 0.1 a nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
typical characteristics (ta = 25 c) total power dissipation vs. case temperature ib 12.5 10 7.5 5 2.5 \ \ s s \0 100 150 tc-case temperature-c derating curve of safe operating area 50 100 150 tc? case temperature - c reverse bias safe operating area 1.0 s t 06 0 - 04 $ o o '2 j * 9 fn l * m " x c ca 100 200 300 400 500 vc--collector to emitter voltage v forward bias safe operating area 2 5 10 20 50 100 200 500 vce ~ collector to emitter voltage- v o: "m transient thermal resistance 0.5 1 2 5 10 20 pw-pulse width?rns 50 100 collector current us. collector to emitter voltage i.or e 0.8 s (j o o 0.6 s -4 0.2 0 12345 vce-"collector to emitter voltage~v dc current gain us. collector current 100 50 20 10 5 2 1 ?-?? v ? ? > i 5= ?m ? s 5 - ? ? vce - s 1 pulsed !!! ^, :: i ^^ s^ -tl v? i 2 5 10 20 50 100200 5001000 1c- collector current -- ma turn on time, storage time and 1 base and collector satu ration fall time us. collector current sj> > voltage us. collector current gi p in ? 10 5 2 1 0.5 0.2 0.1 g_c 0.02 0.01 10 20 1c 50 100 200 500 collector current-ma 1000 1.02.0 5.0 10 20 5o 100200 5001000 1c-collector current - ma
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